RFD12N06RLESM9A
Manufacturer:
Mfr. Part #:
--
Allchips #:
F002-RFD12N06RLESM9A-12-A-0000-X-N
Description:
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- RFD12N06RLESM9A Details
- Packing And Shipping
- Payment Method
- Quality Control
ON Semiconductor / Fairchild,RFD12N06RLESM9A is available at Allchips.100% original and new guarantee. If
comprehensive data for RFD12N06RLESM9A to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 17 A |
Rds On - Drain-Source On-Resistance | 75 mOhms |
Vgs - gate-source voltage | 16 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 37 ns, 50 ns |
Height | 2.39 mm |
Length | 6.73 mm |
Pd - Power Dissipation | 49 W |
Rise Time | 89 ns, 34 ns |
Series | RFD12N06RLESM |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Types | MOSFET |
Typical shutdown delay time | 22 ns, 41 ns |
Typical turn-on delay time | 13 ns, 5.3 ns |
Width | 6.22 mm |
Unit weight | 260.370 mg |
RFD12N06RLESM9A Releted Information
- Hot sale
- Related Categories
- Popular Search