MCH3478-TL-W
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-323-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 2 A |
Rds On - Drain-Source On-Resistance | 125 mOhms |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | 1.7 nC |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 12 ns |
Pd - Power Dissipation | 1.2 W |
Rise Time | 8.7 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 16 ns |
Typical turn-on delay time | 4.4 ns |
Unit weight | 5 mg |
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