MJD122G
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Specification
RoHS | yes |
Configuration | Single |
Transistor polarity | NPN |
Collector - Emitter maximum voltage VCEO | 100 V |
Emitter-base voltage VEBO | 5 V |
Collector-base voltage VCBO | 100 V |
Maximum DC collector current | 8 A |
Maximum collector cut-off current | 10 uA |
Pd - Power Dissipation | 20 W |
Installation style | SMD/SMT |
Package / case | TO-252-3 (DPAK) |
The maximum working temperature | + 150 C |
Series | MJD122 |
Continuous collector current | 8 A |
DC collector / Base Gain hfe Min | 1000 |
DC current gain hFE maximum | 12000 |
Height | 2.38 mm |
Length | 6.73 mm |
Minimum working temperature | - 65 C |
Factory packing quantity | 75 |
Width | 6.22 mm |
Unit weight | 400 mg |
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