MTB50P03HDLT4G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 50 A |
Rds On - Drain-Source On-Resistance | 25 mOhms |
Vgs - gate-source voltage | 15 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 218 ns |
Forward transconductance - minimum | 20 S |
Height | 4.83 mm |
Length | 10.29 mm |
Pd - Power Dissipation | 125 W |
Rise Time | 340 ns |
Series | MTB50P03HDL |
Factory packing quantity | 800 |
Transistor type | 1 P-Channel |
Types | MOSFET |
Typical shutdown delay time | 90 ns |
Typical turn-on delay time | 22 ns |
Width | 9.65 mm |
Unit weight | 4 g |
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