NCV8402ASTT3G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-3 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - continuous drain current | 2 A |
Rds On - Drain-Source On-Resistance | 165 mOhms |
Configuration | Dual |
Pd - Power Dissipation | 1.1 W |
Series | NCV8402A |
Factory packing quantity | 4000 |
Transistor type | 2 N-Channel |
Unit weight | 250 mg |
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