NE5517DG
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Specification
RoHS | yes |
Series | NE5517 |
Number of channels | 2 Channel |
GBP - Gain Bandwidth Product | 2 MHz |
SR - Conversion Rate | 50 V/us |
Output current per channel | 650 uA |
Ib - Input bias current | 5 uA |
Vos - Input bias voltage | 5 mV |
Forward transconductance - minimum | 5400 uS |
Supply Voltage - Max | 44 V |
Supply Voltage - Min | 4 V |
Working power supply current | 2.6 mA |
The maximum working temperature | + 70 C |
Minimum working temperature | 0 C |
Installation style | SMD/SMT |
Package / case | SOIC-16 |
Amplifier type | Transconductance Amplifier |
CMRR - Common Mode Rejection Ratio | 80 dB |
Dual supply voltage | +/- 2 V to +/- 22 V |
Input Voltage Range - Max | Positive Rail - 3 V |
Ios - Enter the bias current | 0.6 uA |
Length | 10 mm |
Maximum dual supply voltage | +/- 22 V |
Maximum input resistance | 26 kOhm |
Minimum dual supply voltage | +/- 2 V |
Output type | Push Pull |
Pd - Power Dissipation | 1125 mW |
Product | Transconductance Amplifiers |
Shut down | No Shutdown |
Factory packing quantity | 48 |
Power type | Single, Dual |
Vcm - common-mode voltage | +/- 12 V |
Width | 4 mm |
Unit weight | 666 mg |
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