NGTB30N120IHSWG
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Mfr. Part #:
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Allchips #:
F002-NGTB30N120IHSWG-10-A-0000-X-N
Description:
Trans IGBT Chip N-CH 1200V 60A 192000mW 3-Pin(3+Tab) TO-247 Tube
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 2 V |
Gate / emitter maximum voltage | 20 V |
Continuous collector current at 25 ° C | 60 A |
Pd - Power Dissipation | 192 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Series | NGTB30N120IHS |
Gate-emitter leakage current | 100 nA |
Factory packing quantity | 30 |
Unit weight | 6.500 g |
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