NSS60100DMTTBG
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | WDFN-6 |
Transistor polarity | PNP |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 60 V |
Collector-base voltage VCBO | 60 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | - 0.3 V |
Gain Bandwidth Product fT | 155 MHz |
The maximum working temperature | + 150 C |
Continuous collector current | 1 A |
DC collector / Base Gain hfe Min | 90 |
DC current gain hFE maximum | 140 |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 2.27 W |
Factory packing quantity | 3000 |
Unit weight | 17 mg |
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