NSVF3007SG3T1G
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | ON Semiconductor |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 60 |
Collector - Emitter maximum voltage VCEO | 12 V |
Emitter-base voltage VEBO | 2 V |
Continuous collector current | 30 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SC-70FL-3 |
Trademark | ON Semiconductor |
Maximum DC collector current | 30 mA |
Minimum working temperature | - 55 C |
working frequency | 8 GHz |
Pd - Power Dissipation | 350 mW |
Factory packing quantity | 3000 |
Unit weight | 6 mg |
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