NSVMMBT6429LT1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 45 V |
Collector-base voltage VCBO | 55 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | 200 mV |
Maximum DC collector current | 200 mA |
Gain Bandwidth Product fT | 700 MHz |
The maximum working temperature | + 150 C |
Series | MMBT6429L |
DC collector / Base Gain hfe Min | 500 at 100 uA at 5 VDC |
DC current gain hFE maximum | 1250 at 100 uA at 5 VDC |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 225 mW |
Factory packing quantity | 3000 |
Unit weight | 8 mg |
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