NTF3055-100T1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 3 A |
Rds On - Drain-Source On-Resistance | 110 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Dual Drain |
Channel mode | Enhancement |
Fall time | 13 ns |
Forward transconductance - minimum | 3.2 S |
Height | 1.57 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 2.1 W |
Rise Time | 14 ns |
Series | NTF3055-100 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Types | MOSFET |
Typical shutdown delay time | 21 ns |
Typical turn-on delay time | 9.4 ns |
Width | 3.5 mm |
Unit weight | 250 mg |
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