NTHD4P02FT1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | ChipFET-8 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - continuous drain current | - 3 A |
Rds On - Drain-Source On-Resistance | 200 mOhms |
Vgs - gate-source voltage | 12 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single with Schottky Diode |
Channel mode | Enhancement |
Fall time | 13 ns |
Forward transconductance - minimum | 5 S |
Height | 1.05 mm |
Length | 3.05 mm |
Pd - Power Dissipation | 1.1 W |
Product | MOSFET Small Signal |
Rise Time | 13 ns |
Series | NTHD4P02 |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Types | MOSFET |
Typical shutdown delay time | 33 ns |
Typical turn-on delay time | 7 ns |
Width | 1.65 mm |
Unit weight | 85 mg |
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