NTNS3193NZT5G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | XLLGA-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 224 mA |
Rds On - Drain-Source On-Resistance | 1.4 Ohms |
Vgs th - gate-source threshold voltage | 1 V |
Vgs - gate-source voltage | 8 V |
Qg - gate charge | 700 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 110 ns |
Pd - Power Dissipation | 120 mW |
Product | MOSFET |
Rise Time | 35 ns |
Series | NTNS3193NZ |
Factory packing quantity | 8000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 201 ns |
Typical turn-on delay time | 18 ns |
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