NTR1P02LT1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - continuous drain current | - 1.3 A |
Rds On - Drain-Source On-Resistance | 220 mOhms |
Vgs - gate-source voltage | 12 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 15 ns |
Height | 0.94 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 400 mW |
Product | MOSFET Small Signal |
Rise Time | 15 ns |
Series | NTR1P02L |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Types | MOSFET |
Typical shutdown delay time | 18 ns |
Typical turn-on delay time | 7 ns |
Width | 1.3 mm |
Unit weight | 8 mg |
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