NUD3160LT1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 150 mA |
Rds On - Drain-Source On-Resistance | 1.8 Ohms |
Vgs - gate-source voltage | 12 V |
Minimum working temperature | - 40 C |
The maximum working temperature | + 125 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 618 ns, 600 ns |
Height | 0.94 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 225 mW |
Product | MOSFET Small Signal |
Rise Time | 618 ns, 600 ns |
Series | NUD3160 |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Width | 1.3 mm |
Unit weight | 8 mg |
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