NVF2955T1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 60 V |
Id - continuous drain current | - 2.6 A |
Rds On - Drain-Source On-Resistance | 154 mOhms |
Vgs th - gate-source threshold voltage | - 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 14.3 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Dual Drain |
Fall time | 38 ns |
Forward transconductance - minimum | 1.77 S |
Pd - Power Dissipation | 2.3 W |
Rise Time | 7.6 ns |
Series | NTF2955 |
Factory packing quantity | 1000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 65 ns |
Typical turn-on delay time | 11 ns |
Unit weight | 250 mg |
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