NVMFS5C442NWFT1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-FL-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 140 A |
Rds On - Drain-Source On-Resistance | 1.9 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 32 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 18 ns |
Forward transconductance - minimum | 92 S |
Pd - Power Dissipation | 83 W |
Rise Time | 50 ns |
Factory packing quantity | 1500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 23 ns |
Typical turn-on delay time | 11 ns |
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