NVTFS5C658NLTAG
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | WDFN-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 109 A |
Rds On - Drain-Source On-Resistance | 4.2 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 27 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 105 ns |
Forward transconductance - minimum | 100 S |
Pd - Power Dissipation | 114 W |
Rise Time | 96 ns |
Series | NVTFS5C658NL |
Factory packing quantity | 1500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 36 ns |
Typical turn-on delay time | 16 ns |
Unit weight | 17 mg |
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