SMMBT5551LT1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 160 V |
Collector-base voltage VCBO | 180 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | 0.25 V |
Maximum DC collector current | 600 mA |
The maximum working temperature | + 150 C |
Series | MMBT5551L |
Continuous collector current | 600 V |
DC collector / Base Gain hfe Min | 20 |
DC current gain hFE maximum | 250 |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 300 mW |
Factory packing quantity | 3000 |
Unit weight | 112 mg |
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