VEC2415-TL-W
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | VEC-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V, 60 V |
Id - continuous drain current | 3 A, 3 A |
Rds On - Drain-Source On-Resistance | 116 mOhms, 116 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V, 1.2 V |
Vgs - gate-source voltage | 20 V, 20 V |
Qg - gate charge | 10 nC, 10 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 22 ns, 22 ns |
Forward transconductance - minimum | 2.6 S, 2.6 S |
Pd - Power Dissipation | 900 mW |
Rise Time | 7.5 ns, 7.5 ns |
Factory packing quantity | 3000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 41 ns, 41 ns |
Typical turn-on delay time | 7.3 ns, 7.3 ns |
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