BPY 62-4
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | TO-18 |
Installation style | Through Hole |
Peak wavelength | 830 nm |
Open the state of the maximum collector current | 100 mA |
Collector - Emitter maximum voltage VCEO | 35 V |
Dark current | 50 nA |
Rise Time | 9 us |
Fall time | 9 us |
Pd - Power Dissipation | 200 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 125 C |
Collector - emitter breakdown voltage | 35 V |
Collector - emitter saturation voltage | 160 mV |
Half strength angle | 8 deg |
Height | 6.2 mm |
Length | 5.6 mm |
Weak current | 2500 uA |
Factory packing quantity | 1000 |
Types | Chip |
Wavelength | 830 nm |
Width | 5.6 mm |
Unit weight | 400 mg |
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