EE-SJ3-D
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Specification
RoHS | yes |
Slot width | 3.4 mm |
Aperture width | 0.2 mm |
Collector - Emitter maximum voltage VCEO | 30 V |
Maximum collector current | 20 mA |
Installation style | Through Hole |
The maximum working temperature | + 85 C |
Minimum working temperature | - 25 C |
Series | EE-SJ3 |
Fall time | 4 us |
Height | 10.4 mm |
Length | 13.6 mm |
Output type | Phototransistor |
Pd - Power Dissipation | 100 mW |
Rise Time | 4 us |
Sensing distance | 3.4 mm |
Sensing method | Transmissive, Slotted |
Factory packing quantity | 50 |
Termination type | PCB |
Vf - forward voltage | 1.2 V |
Vr - reverse voltage | 4 V |
Wavelength | 940 nm |
Width | 6.2 mm |
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