2SB1708TL
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | TSMT-3 |
Transistor polarity | PNP |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | - 30 V |
Collector-base voltage VCBO | - 30 V |
Emitter-base voltage VEBO | - 6 V |
Collector - emitter saturation voltage | - 180 mV |
Maximum DC collector current | 3 A |
Gain Bandwidth Product fT | 200 MHz |
The maximum working temperature | + 150 C |
Series | 2SB1708 |
Continuous collector current | - 3 A |
DC collector / Base Gain hfe Min | 270 |
DC current gain hFE maximum | 270 at 200 mA at 2 V |
Height | 0.85 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Factory packing quantity | 3000 |
Width | 1.6 mm |
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