2SCR513P5T100
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SC-62-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 50 V |
Collector-base voltage VCBO | 50 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | 130 mV |
Maximum DC collector current | 1 A |
Gain Bandwidth Product fT | 360 MHz |
The maximum working temperature | + 150 C |
Series | 2SxR |
Continuous collector current | 1 A |
DC collector / Base Gain hfe Min | 180 at 50 mA, 2 V |
DC current gain hFE maximum | 450 at 50 mA, 2 V |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 500 mW (1/2 W) |
Factory packing quantity | 1000 |
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