2SD2675TL
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | TSMT-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 30 V |
Collector-base voltage VCBO | 30 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | 120 mV |
Maximum DC collector current | 1 A |
Gain Bandwidth Product fT | 320 MHz |
The maximum working temperature | + 150 C |
Series | 2SD2675 |
Continuous collector current | 1 A |
DC collector / Base Gain hfe Min | 270 |
DC current gain hFE maximum | 680 |
Height | 0.85 mm |
Length | 2.9 mm |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 1 W |
Factory packing quantity | 3000 |
Width | 1.6 mm |
Unit weight | 5.636 g |
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