EM6K6T2R
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-563-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 300 mA |
Rds On - Drain-Source On-Resistance | 1 Ohms |
Vgs - gate-source voltage | 8 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 10 ns |
Height | 0.5 mm |
Length | 1.6 mm |
Pd - Power Dissipation | 150 mW |
Product | MOSFET Small Signal |
Rise Time | 10 ns |
Series | EM6K6 |
Factory packing quantity | 8000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 15 ns |
Typical turn-on delay time | 5 ns |
Width | 1.2 mm |
Unit weight | 3 mg |
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