EMZ1T2R
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | EMT-6 |
Transistor polarity | NPN, PNP |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | - 50 V, + 50 V |
Collector-base voltage VCBO | - 60 V, + 60 V |
Emitter-base voltage VEBO | + 7 V, - 6 V |
Maximum DC collector current | 0.15 A |
Gain Bandwidth Product fT | 140 MHz, 180 MHz |
The maximum working temperature | + 150 C |
Series | EMZ1 |
Continuous collector current | + 150 mA / - 150 mA |
DC collector / Base Gain hfe Min | 120 |
DC current gain hFE maximum | 560 |
Height | 0.5 mm |
Length | 1.6 mm |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 150 mW |
Factory packing quantity | 8000 |
Width | 1.2 mm |
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