R6046ANZ1C9
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Specification
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 46 A |
Rds On - Drain-Source On-Resistance | 69 mOhms |
Vgs th - gate-source threshold voltage | 2.5 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 150 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 100 ns |
Forward transconductance - minimum | 19 S |
Pd - Power Dissipation | 120 W |
Rise Time | 120 ns |
Factory packing quantity | 450 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 260 ns |
Typical turn-on delay time | 65 ns |
Unit weight | 6 g |
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