RSM002P03T2L
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-723-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 200 mA |
Rds On - Drain-Source On-Resistance | 1.6 Ohms |
Vgs - gate-source voltage | 20 V |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 5 ns |
Height | 0.5 mm |
Length | 1.2 mm |
Pd - Power Dissipation | 150 mW |
Product | MOSFET Small Signal |
Rise Time | 5 ns |
Series | RSM002P03 |
Factory packing quantity | 8000 |
Transistor type | 1 P-Channel |
Types | MOSFET |
Typical shutdown delay time | 30 ns |
Typical turn-on delay time | 8 ns |
Width | 0.8 mm |
Unit weight | 8 mg |
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