RYM002N05T2CL
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-723-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 50 V |
Id - continuous drain current | 200 mA |
Rds On - Drain-Source On-Resistance | 2.2 Ohms |
Vgs th - gate-source threshold voltage | 0.8 V |
Vgs - gate-source voltage | 8 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 43 ns |
Pd - Power Dissipation | 150 mW |
Rise Time | 8 ns |
Series | RYM002N05ebydtfwqzcff |
Factory packing quantity | 8000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 17 ns |
Typical turn-on delay time | 5 ns |
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