RZF013P01TL
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-323T-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 12 V |
Id - continuous drain current | - 1.3 A |
Rds On - Drain-Source On-Resistance | 190 mOhms |
Vgs th - gate-source threshold voltage | - 1 V |
Vgs - gate-source voltage | 10 V |
Qg - gate charge | 2.4 nC |
Configuration | Single |
Fall time | 9 ns |
Height | 0.85 mm |
Length | 2 mm |
Pd - Power Dissipation | 800 mW |
Rise Time | 10 ns |
Series | RZF013P01 |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 30 ns |
Typical turn-on delay time | 8 ns |
Width | 1.7 mm |
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