TT8J21TR
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSST-8 |
Number of channels | 2 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - continuous drain current | - 2.5 A |
Rds On - Drain-Source On-Resistance | 68 mOhms |
Vgs - gate-source voltage | 10 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual Dual Drain |
Channel mode | Enhancement |
Fall time | 30 ns |
Height | 0.8 mm |
Length | 3 mm |
Pd - Power Dissipation | 1.25 W |
Product | MOSFET Small Signal |
Rise Time | 30 ns |
Factory packing quantity | 3000 |
Transistor type | 2 P-Channel |
Typical shutdown delay time | 120 ns |
Typical turn-on delay time | 9 ns |
Width | 1.6 mm |
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