TT8M3TR
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSST-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V, - 20 V |
Id - continuous drain current | 2.5 A, 2.4 A |
Rds On - Drain-Source On-Resistance | 140 mOhms, 360 mOhms |
Vgs th - gate-source threshold voltage | 300 mV, - 300 mV |
Vgs - gate-source voltage | 10 V, 10 V |
Qg - gate charge | 3.6 nC, 6.7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 17 ns, 45 ns |
Forward transconductance - minimum | 2.7 S, 2.4 S |
Height | 0.8 mm |
Length | 3 mm |
Pd - Power Dissipation | 1.25 W |
Product | MOSFET |
Rise Time | 17 ns, 25 ns |
Factory packing quantity | 3000 |
Types | Power MOSFET |
Typical shutdown delay time | 28 ns, 55 ns |
Typical turn-on delay time | 9 ns, 9 ns |
Width | 1.6 mm |
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