UM6K1NTN
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-363-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 100 mA |
Rds On - Drain-Source On-Resistance | 8 Ohms |
Vgs - gate-source voltage | 20 V |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 35 ns |
Height | 0.9 mm |
Length | 2 mm |
Pd - Power Dissipation | 150 mW |
Product | MOSFET Small Signal |
Rise Time | 35 ns |
Series | UM6K1N |
Factory packing quantity | 3000 |
Transistor type | 2 N-Channel |
Types | MOSFET |
Typical shutdown delay time | 80 ns |
Typical turn-on delay time | 15 ns |
Width | 1.25 mm |
Unit weight | 7.500 mg |
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