LET9150
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 20 A |
Vds - Drain-Source Breakdown Voltage | 80 V |
Technology | Si |
Gain | 20 dB at 860 MHz |
Output Power | 150 W |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | M246 |
Configuration | Dual |
working frequency | 2 GHz |
Pd - Power Dissipation | 269 W |
Series | LET9150 |
Factory packing quantity | 60 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | 15 V |
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