MJD117T4
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Specification
RoHS | yes |
Configuration | Single |
Transistor polarity | PNP |
Collector - Emitter maximum voltage VCEO | 100 V |
Emitter-base voltage VEBO | 5 V |
Collector-base voltage VCBO | 100 V |
Maximum DC collector current | 2 A |
Maximum collector cut-off current | 20 uA |
Installation style | SMD/SMT |
Package / case | TO-252 |
The maximum working temperature | + 150 C |
Series | MJD117T4 |
DC collector / Base Gain hfe Min | 200 |
Height | 2.4 mm |
Length | 6.6 mm |
Factory packing quantity | 2500 |
Width | 6.2 mm |
Unit weight | 1.800 g |
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