PD55025-E
Manufacturer:
Mfr. Part #:
--
Allchips #:
F004-PD55025-E-35-A-0000-X-Y
Description:
RF Mosfet LDMOS 12.5 V 200 mA 500MHz 14.5dB 25W 10-PowerSO
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 7 A |
Vds - Drain-Source Breakdown Voltage | 40 V |
Technology | Si |
Gain | 14.5 dB at 500 MHz |
Output Power | 25 W |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | PowerSO-10RF-Formed-4 |
Channel mode | Enhancement |
Configuration | Single |
Height | 3.5 mm |
Length | 7.5 mm |
Minimum working temperature | - 65 C |
working frequency | 1 GHz |
Pd - Power Dissipation | 79 W |
Series | PD55025-E |
Factory packing quantity | 400 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | +/- 20 V |
Width | 9.4 mm |
Unit weight | 3 g |
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