PD57018TR-E
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 2.5 A |
Vds - Drain-Source Breakdown Voltage | 65 V |
Rds On - Drain-Source On-Resistance | 760 mOhms |
Technology | Si |
Gain | 16.5 dB at 945 MHz |
Output Power | 18 W |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | PowerSO-10RF (Formed Lead) |
Channel mode | Enhancement |
Configuration | Single |
Height | 3.5 mm |
Length | 7.5 mm |
Minimum working temperature | - 65 C |
working frequency | 1 GHz |
Pd - Power Dissipation | 31.7 W |
Series | PD57018-E |
Factory packing quantity | 600 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | +/- 20 V |
Width | 9.4 mm |
Unit weight | 3 g |
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