STB14NM50N
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - continuous drain current | 12 A |
Rds On - Drain-Source On-Resistance | 900 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 2 V |
Qg - gate charge | 42 nC |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 32 ns |
Pd - Power Dissipation | 90 W |
Rise Time | 9 ns |
Series | N-channel MDmesh |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Types | MDmesh II Power MOSFET |
Typical shutdown delay time | 12 ns |
Typical turn-on delay time | 15 ns |
Unit weight | 4 g |
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