STGB10NB40LZT4
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Specification
RoHS | yes |
Technology | Si |
Package / case | D2PAK-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 1.8 V |
Collector - emitter saturation voltage | 1.2 V |
Gate / emitter maximum voltage | 12 V |
Continuous collector current at 25 ° C | 20 A |
Pd - Power Dissipation | 150 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Series | STGB10NB40LZ |
Continuous collector current | 20 A |
Collector maximum continuous current Ic | 20 A |
Gate-emitter leakage current | 700 uA |
Height | 4.6 mm |
Length | 10.4 mm |
Factory packing quantity | 1000 |
Width | 9.35 mm |
Unit weight | 2.240 g |
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