STGB30V60DF
In stock
- STGB30V60DF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Package / case | D2PAK-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.85 V |
Gate / emitter maximum voltage | 20 V |
Continuous collector current at 25 ° C | 60 A |
Pd - Power Dissipation | 258 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Series | 600-650V IGBTs |
Collector maximum continuous current Ic | 30 A |
Gate-emitter leakage current | 250 nA |
Factory packing quantity | 1000 |
Unit weight | 2.240 g |
Others include "STGB30V60DF" parts
The following parts include 'STGB30V60DF'
STGB30V60DF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STGB30V60DF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
STGB30V60DF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
STGB30V60DF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
STGB30V60DF
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron