STGIPN3H60-H
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | 3-Phase |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2.15 V |
Continuous collector current at 25 ° C | 3 A |
Pd - Power Dissipation | 8 W |
Package / case | NDIP-26 |
The maximum working temperature | + 125 C |
Minimum working temperature | - 40 C |
Installation style | Through Hole |
Series | SLLIMM |
Factory packing quantity | 476 |
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