STGIPQ8C60T-HZ
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Specification
RoHS | yes |
Technology | - |
Product | IGBT Silicon Modules |
Configuration | Half Bridge |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2 V |
Continuous collector current at 25 ° C | 8 A |
Gate-emitter leakage current | - |
Pd - Power Dissipation | 19.2 W |
Package / case | N2DIP-26 |
The maximum working temperature | + 125 C |
Gate / emitter maximum voltage | - |
Minimum working temperature | - 40 C |
Installation style | Through Hole |
Series | SLLIMM |
Factory packing quantity | 360 |
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