STGWA60H65DFB
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 2 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 80 A |
Pd - Power Dissipation | 375 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Series | 600-650V IGBTs |
Continuous collector current | 80 A |
Collector maximum continuous current Ic | 80 A |
Gate-emitter leakage current | 250 nA |
Height | 5.15 mm |
Length | 20.15 mm |
Range of working temperature | - 55 C to + 175 C |
Factory packing quantity | 600 |
Width | 15.75 mm |
Unit weight | 38 g |
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