STL11N3LLH6
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PowerFLAT-3.3x3.3-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 11 A |
Rds On - Drain-Source On-Resistance | 6 mOhms |
Vgs th - gate-source threshold voltage | 1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 17 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 50 W |
Series | N-channel STripFET |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
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