STP110N55F6
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - continuous drain current | 110 A |
Rds On - Drain-Source On-Resistance | 5.2 mOhms |
Qg - gate charge | 120 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Pd - Power Dissipation | 150 W |
Series | N-channel STripFET |
Factory packing quantity | 1000 |
Unit weight | 330 mg |
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STP110N55F6
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N-Channel 55 V 110A (Tc) 150W (Tc) Through Hole TO-220
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