STP260N6F6
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 75 V |
Id - continuous drain current | 120 A |
Rds On - Drain-Source On-Resistance | 2.4 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 183 nC |
Configuration | Single |
Fall time | 62.6 ns |
Pd - Power Dissipation | 300 W |
Rise Time | 165 ns |
Series | STP260N6F6 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Unit weight | 330 mg |
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