STP6N65M2
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 4 A |
Rds On - Drain-Source On-Resistance | 1.35 Ohms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 25 V |
Qg - gate charge | 9.8 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 20 ns |
Pd - Power Dissipation | 60 W |
Product | Power MOSFET |
Rise Time | 7 ns |
Series | MDmesh M2 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 6.5 ns |
Typical turn-on delay time | 19 ns |
Unit weight | 330 mg |
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