STP90NF03L
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 90 A |
Rds On - Drain-Source On-Resistance | 6.5 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 65 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 105 ns |
Forward transconductance - minimum | 40 S |
Height | 9.15 mm |
Length | 10.4 mm |
Pd - Power Dissipation | 150 W |
Rise Time | 200 ns |
Series | N-channel STripFET |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Types | MOSFET |
Typical shutdown delay time | 50 ns |
Typical turn-on delay time | 30 ns |
Width | 4.6 mm |
Unit weight | 1.438 g |
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