STQ1HNK60R-AP
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-92-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 400 mA |
Rds On - Drain-Source On-Resistance | 8.5 Ohms |
Vgs - gate-source voltage | 30 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 25 ns |
Height | 4.95 mm |
Length | 4.95 mm |
Pd - Power Dissipation | 30 W |
Rise Time | 5 ns |
Series | STQ1HNK60R |
Factory packing quantity | 2000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 19 ns |
Typical turn-on delay time | 6.5 ns |
Width | 3.94 mm |
Unit weight | 220 mg |
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